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Selection Guide

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INFRARED DETECTORS

A wide range of high performance sensors for infrared detection

HAMAMATSU infrared detectors

Product name	Spectral response range (																								m)		Feature	Page
	0								1					2												3
														1.7													Short wavelength enhanced type
					0.5																							1
																											Can detect light from 0.5 m
														1.7													Standard type
									0.9																		High-speed response, high sensitivity, low dark current	1, 2, 6
																											Available various types of active areas, arrays and packages
																											For optical measurement around 1.7 m
InGaAs PIN photodiodes									0.9						1.9													3
																											Available TE-cooled type
																											For optical measurement in the band of water content
									0.9								2.1											3
																											absorption (1.9 m)
																											Available TE-cooled type
									1.2																		For NIR spectroscopy
																						2.6						4
																											Available TE-cooled type
																											Types for spectrophotometry and WDM monitor, and
InGaAs linear image sensors									0.9												2.55							5, 6
																											high-speed type available
Product name	Spectral response range (																								m)		Feature	Page
	0				5				10					15						20						25
																											Photoconductive detectors whose resistance decreases
PbS photoconductive detectors	1 3.2																										with the input of infrared light	7
																											Can be used at room temperatures in a wide range of applications
																											such as radiation thermometers and flame monitors
																											Detects wavelengths up to 5.2 m
																											Offers higher response speed at room temperatures compared
PbSe photoconductive detectors	1.5				5.2																							7, 8
																											to other detectors used in the same wavelength range. Suit-
																											able for a wide range of applications such as gas analyzers.
InSb photoconductive detectors	1				6.7																						Detects wavelengths up to around 6.5 m, with high	9
																											sensitivity over long periods by thermoelectric cooling

	InSb photovoltaic detectors	1	5.5	High-speed and high sensitivity in so-called atmosphe-	9
				ric window (3 to 5 m)
	InAs photovoltaic detectors	1	3.8	Covers a spectral response range close to PbS but	10
				offers higher response speed

Infrared detector in the 5 m spectral band, with high

InAsSb photodiode

1

5.8

10

sensitivity and high reliability

High-speed response

Various types with different spectral response are provi-

MCT (HgCdTe) photoconductive

ded by changing the HgTe and CdTe composition ratio.

Photoconductive detectors whose resistance decrea-

2

25

11, 12

detectors

ses with the input of infrared light

Available with thermoelectric coolers, cryogenic de-

wars and stirling coolers

1

MCT (HgCdTe) photovoltaic detectors

13.5

High-speed response and low noise

12

		Si + PbS	0.2	3	Wide spectral response range from UV to IR
	Two-color		0.2	4.85	Two-color detectors incorporate an infrared-transmit-	14, 15
		Si + PbSe			ting Si photodiode mounted over a PbS detector, Pb-
	Detectors
					Se detector or InGaAs PIN photodiode along the same
		Si + InGaAs	0.32 2.55
					optical axis.

			High-speed detectors with high sensitivity in 10	m band
	10
Photon drag detectors			(for CO2 laser detection)	16
			Room temperature operation with high-speed response

For detailed information on the products listed in this catalogue, see their datasheets

that are available from our website www.hamamatsu.com

Typical spectral response characteristics of HAMAMATSU infrared detectors

D* (cm Hz1/2/W)

1014

1013

1012

1011

1010

109

108

Short wavelength enhanced type InGaAs (25 ˚C) Long wavelength type InGaAs (-20 ˚C)

	PbS (-20 ˚C)
		InAs (-196 ˚C)
		PbS (25 ˚C)
		InSb (-196 ˚C)
		InAsSb (-196 ˚C)
		Long wavelength type
		InGaAs (25 ˚C)
Si (25 ˚C)		MCT (-60 ˚C)
PbSe (25 ˚C)		PbSe (-20 ˚C)

MCT (-196 ˚C)

MCT (-196 ˚C)	MCT (-196 ˚C)

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

Wavelength ( m)

KIRDB0259EE

When using infrared detectors, the following points should be taken into consideration for making a device selection.

Spectral response

As can be seen from the figure above, HAMAMATSU provides a variety of infrared detectors with different spectral response characteristics. It should be noted that cooling a detector element may affect its spectral response. For InGaAs, InAs and InSb detectors, the spectral response shifts to the shorter wavelength side; in contrast, for PbS, PbSe and MCT detectors it shifts to the longer wavelength side.

Response speed

Various detectors are available with different response speeds. It should be noted that the response speeds of the PbS and PbSe detectors become worse with cooling.

Active area and number of elements

HAMAMATSU photosensors are available in a wide range of active area sizes. Also available are multi-element detector arrays optimized for high-speed multichannel spectrophotometry.

Cooling

Besides easy-to-use photosensors designed for room temperature, HAMAMATSU provides various types of sensors that are cooled with thermoelectric coolers, cryogenic dewars (for liquid nitrogen cooling), or stirling coolers.

Object temperature

When selecting a detector in accordance with the temperature of an object, it is necessary to consider the distribution of the energy (the wavelength dependency of the energy) radiated from the object. When the temperature of the object is changed, the distribution of the radiating energy is given by the law of black body radiation (Planck,s law), as shown in the figure at the right-hand side. The following relationship is established by the peak sensitivity wavelength λp ( m) and the absolute temperature T (K).

λp T=2897.9

Law of black body radiation (Planck,s law)

	104
		T(K)=6000
	103			5000
)				4000
-1	102
m				3000
1	10	1
-
sr				2000
		0
2	10
-				1500
cm
	10-1			1000
(W	10-2				800
radiance
	10-3				600
						400
	10-4
						273
Spectral	10-5
							200
	10-6
	10-7
	10-8
		0.1	.2	.4 .6 .81	2	4	6 810	20	40 6080100

Wavelength ( m)

KIRDB0014EB

InGaAs PIN photodiodes

Short wavelength enhanced type

								(Typ. Ta=25 ˚C, unless otherwise noted)
Type no.		Cooling	Active area	Spectral response	Peak sensitivity	Cut-off frequency	Package		Photo	Accessory
			(mm)	range	wavelength	(MHz)				(sold separately)
				( m)	( m)
	G10899-003K		φ0.3			300
NEW
	G10899-005K
NEW			φ0.5			150	TO-18
G10899-01K		Non-cooled	φ1	0.5 to 1.7	1.55	45				C4159-03 (P.21)
G10899-02K			φ2			10
							TO-5
G10899-03K			φ3			5

Standard type

Metal package

Various active area sizes are available.							(Typ. Ta=25 ˚C, unless otherwise noted)
Type no.	Cooling	Active area	Spectral response	Peak sensitivity	Cut-off frequency	Package		Photo	Accessory
			range	wavelength					(sold separately)
		(mm)	( m)	( m)	(MHz)
G8376-03		φ0.3			400
					(VR=5 V)
G8376-05		φ0.5			200	TO-18
					(VR=5 V)
G8370-01		φ1			35
					(VR=5 V)
G8370-02		φ2	0.9 to 1.7		4
					(VR=1 V)
						TO-5
G8370-03		φ3			2
					(VR=1 V)
	Non-cooled				0.6
G8370-05		φ5				TO-8
					(VR=1 V)
									C4159-03 (P.21)
G8370-81*		φ1			35	TO-18
					(VR=1 V)
G8370-82*		φ2		1.55	4
					(VR=1 V)
			0.9 to 1.7			TO-5
G8370-83*		φ3			2
					(VR=1 V)
G8370-85*		φ5			0.6	TO-8
					(VR=1 V)
G8605-11		φ1			18
					(VR=1 V)
G8605-12	One-stage	φ2			4				C4159-03 (P.21)
					(VR=1 V)
	TE-cooled		0.9 to 1.67						A3179 (P.19)
					2
G8605-13	(T=-10 ˚C)	φ3							C1103-04 (P.18)
					(VR=1 V)
G8605-15		φ5			0.6
					(VR=1 V)
						TO-8
G8605-21		φ1			18
					(VR=1 V)
G8605-22	Two-stage	φ2			4				C4159-03 (P.21)
					(VR=1 V)
	TE-cooled		0.9 to 1.65						A3179-01 (P.19)
					2
G8605-23	(T=-20 ˚C)	φ3							C1103-04 (P.18)
					(VR=1 V)
G8605-25		φ5			0.6
					(VR=1 V)
* Low PDL (polarization dependence loss) type

1

Ceramic package

(Typ. Ta=25 ˚C)

Active area

Spectral response

Peak sensitivity

Cut-off frequency

Window

Type no.

range

wavelength

VR=5 V

Photo

material

(mm)

( m)

( m)

(MHz)

G11193-02R

NEW

φ0.2

1000

Silicone resin

G11193-03R

NEW

φ0.3

0.9 to 1.7

1.55

500

G8370-10

φ10

0.1*1

Borosilicate

* 1: VR=0 V

Surface mount type

These InGaAs PIN photodiodes are assembled on a small ceramic base originally developed for laser diode monitoring.

G8941 series InGaAs photodiodes use a front-illuminated sensor chip, while G9230-01 uses a back-thinned (back-illuminated)

sensor chip mounted on a base without wire bonding to allow an optical fiber to be set in close proximity.

(Typ. Ta=25 ˚C)

Active area

Spectral response

Peak sensitivity

Cut-off frequency

Type no.

range

wavelength

VR=5 V

Package

Photo

Type

(mm)

( m)

( m)

(MHz)

G8941-01

φ1

35

0.9 to 1.7

Front-illuminated

G8941-02

φ0.5

200

type

1.55

Ceramic

G8941-03

0.9 to 1.7

φ0.3

400

G9230-01

0.95 to 1.7

Back-illuminated

type

	Spectral response
	G8376/G8370 series, etc.
	1.2							(Typ. Ta=25 ˚C)
						G10899 series
				G8370-81/-82/-83/-85
	1.0
(A/W)			G8370-01/-02/-03/-05							(A/W)
			G8376 series
	0.8		G8941 series
sensitivity										sensitivity
		Si photodiode
	0.6	S1337-BQ
Photo	0.4									Photo
	0.2						G9230-01
	0		Si photodiode S1337-BR
	0.19		0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8
					Wavelength ( m)
									KIRDB0444EB

	G8605 series								G11193 series, G8370-10
1.0							(Typ.)		1.2				(Typ. Ta=25 ˚C)
	T=25 ˚C
	T=-10 ˚C								1.0
0.8	T=-20 ˚C
										G11193 series
								(A/W)
									0.8
0.6								sensitivity
									0.6
0.4								Photo				G8370-10
									0.4
0.2									0.2
0									0
0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0		0.8	1.0	1.2	1.4	1.6	1.8

Wavelength ( m)	Wavelength ( m)
KIRDB0184EA	KIRDB0284EB

2

Long wavelength type

Peak sensitivity wavelength: 1.75

m

These are suitable for optical measurement around 1.7

m.

(Typ. Ta=25 ˚C, unless otherwise noted)

Active area

Spectral response

Peak sensitivity

Cut-off frequency

Accessory

Type no.

Cooling

range

wavelength

VR=1 V

Package

Photo

(sold separately)

(mm)

( m)

( m)

(MHz)

G8421-03

φ0.3

100

G8421-05

φ0.5

80

TO-18

C4159-03 (P.21)

G8371-01

Non-cooled

φ1

0.9 to 1.9

40

G8371-03

φ3

3

TO-5

G5851-103

φ0.3

1.75

100

One-stage

C4159-03 (P.21)

G5851-11

TE-cooled

φ1

0.9 to 1.87

40

TO-8

A3179 (P.19)

(T=-10 ˚C)

C1103-04 (P.18)

G5851-13

φ3

3

G5851-203

φ0.3

100

Two-stage

C4159-03 (P.21)

G5851-21

TE-cooled

φ1

0.9 to 1.85

40

TO-8

A3179-01 (P.19)

(T=-20 ˚C)

C1103-04 (P.18)

G5851-23

φ3

3

Peak sensitivity wavelength: 1.95

m

These InGaAs PIN photodiodes are optimized for optical measurement in the 1.9

m band at which water

absorption can be readily detected.

(Typ. Ta=25 ˚C, unless otherwise noted)

Active area

Spectral response

Peak sensitivity

Cut-off frequency

Accessory

Type no.

Cooling

range

wavelength

VR=1 V

Package

Photo

(sold separately)

(mm)

( m)

( m)

(MHz)

G8422-03

φ0.3

100

G8422-05

φ0.5

80

TO-18

C4159-03 (P.21)

G8372-01

Non-cooled

φ1

0.9 to 2.1

40

G8372-03

φ3

3

TO-5

G5852-103

φ0.3

1.95

100

One-stage

C4159-03 (P.21)

G5852-11

TE-cooled

φ1

0.9 to 2.07

40

TO-8

A3179 (P.19)

(T=-10 ˚C)

C1103-04 (P.18)

G5852-13

φ3

3

G5852-203

φ0.3

100

Two-stage

C4159-03 (P.21)

G5852-21

TE-cooled

φ1

0.9 to 2.05

40

TO-8

A3179-01 (P.19)

(T=-20 ˚C)

C1103-04 (P.18)

G5852-23

φ3

3

Spectral response

G8421/G8371/G5851 series

G8422/G8372/G5852 series

Photo sensitivity (A/W)

3

(Typ.)

1.4

T=25 ˚C

T=-10 ˚C 1.2 T=-20 ˚C

1.0

0.8

0.6

0.4

0.2

0	1.0	1.2	1.4	1.6	1.8	2.0	2.2
0.8

Wavelength ( m)

KIRDB0221EA

Photo sensitivity (A/W)

(Typ.)

1.4

T=25 ˚C

T=-10 ˚C 1.2 T=-20 ˚C

1.0

0.8

0.6

0.4

0.2

0	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4
0.8

Wavelength ( m)

KIRDB0226EA

InGaAs PIN photodiodes

Peak sensitivity wavelength: 2.3

m

These InGaAs PIN photodiodes are suitable for use in NIR (near infrared) spectroscopy.

(Typ. Ta=25 ˚C, unless otherwise noted)

Active area

Spectral response

Peak sensitivity

Cut-off frequency

Accessory

Type no.

Cooling

range

wavelength

VR=1 V

Package

Photo

(sold separately)

(mm)

( m)

( m)

(MHz)

G8423-03

φ0.3

60

G8423-05

φ0.5

50

TO-18

C4159-03 (P.21)

G8373-01

Non-cooled

φ1

1.2 to 2.6

15

G8373-03

φ3

1.5

TO-5

2.3

G5853-103

φ0.3

60

One-stage

C4159-03 (P.21)

G5853-11

TE-cooled

φ1

1.2 to 2.57

15

TO-8

A3179 (P.19)

(T=-10 ˚C)

C1103-04 (P.18)

G5853-13

φ3

1.5

G5853-203

φ0.3

60

Two-stage

C4159-03 (P.21)

G5853-21

TE-cooled

φ1

1.2 to 2.55

15

TO-8

A3179-01 (P.19)

(T=-20 ˚C)

C1103-04 (P.18)

G5853-23

φ3

1.5

Infrared detector modules with preamp

These modules consist of an InGaAs PIN photodiode assembled with matched preamplifier, and operate by

connecting a DC power supply.

(Typ.)

Active area

Measurement condition

Cut-off

Peak sensitivity

Type no.

Detector

Cooling

Element temperature

wavelength

wavelength

Photo

(mm)

(˚C)

( m)

( m)

G6121

G8370-05

Non-cooled

φ5

25

1.70

1.55

G6122*1

G5852-21

2.05

1.95

φ1

G6122-03*1

G5853-21

TE-cooled

-15

2.56

2.3

G6126*1

G8605-25

φ5

1.66

1.55

G7754-01

G5853-01

φ1

(chip)

Liquid nitrogen

-196

2.4

2.0

G7754-03

G5853-03

φ3

(chip)

*1:

EN 61326 Class B

Spectral response

G8423/G8373/G5853 series

G6121, G6122, G6122-03, G6126, G7754-01/-03

Photo sensitivity (A/W)

(Typ.)

1.4

T=25 ˚C

1.2

T=-10 ˚C

T=-20 ˚C

1.0

0.8

0.6

0.4

0.2

0	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4	2.6	2.8
0.8

	1013					(Typ. T=25 ˚C)
					G6126	G7754-01
/W)	1012	G6121
1/2
Hz						G6122
(cm
						G7754-03
λ
D*	1011
					G6122-03
	1010
	0.5		1	1.5	2	2.5	3

Wavelength ( m)

Wavelength ( m)

4

KIRDB0216EB

KIRDB0369EB

Linear image sensors, photodiode arrays

InGaAs linear image sensors for spectrophotometry

One-stage TE (thermoelectrically)-cooled types can be cooled down to -10 ˚C and cover a spectral range from 0.9 to 1.67 m. Two-stage TEcooled types can be cooled down to -20 ˚C, which make them ideal for measuring longer wavelengths from 0.9 to 2.55 m.

			Pixel pitch		Number of	Active area	Spectral response	Defective		Compatible driver
	Type no.	Cooling					range		Photo	circuit
			(	m)	pixels	(mm × mm)		pixels
							( m)			(sold separately)
	G9211-256S			50	256
						12.8 × 0.25
	G9212-512S	One-stage		25	512
		TE-cooled					0.9 to 1.67	1 % max.		C8061-01
	G9213-256S	(T=-10 ˚C)		50	256
						12.8 × 0.5
	G9214-512S			25	512
	G9205-256W						0.9 to 1.85
	G9206-256W	Two-stage					0.9 to 2.05
		TE-cooled		50	256	12.8 × 0.25		5 % max.		C8062-01
	G9207-256W	(T=-20 ˚C)					0.9 to 2.25
	G9208-256W						0.9 to 2.55

InGaAs linear image sensors for WDM monitor

These linear images sensors were developed for WDM monitors. The output can be obtained from all pixels since there are no defective pixels.

			Pixel pitch		Number of	Active area	Spectral response	Defective		Compatible driver
	Type no.	Cooling					range		Photo	circuit
					pixels	(mm × mm)		pixels
			(	m)			( m)			(sold separately)
	G9201-256S	One-stage TE-cooled		50	256		0.9 to 1.67			C8061-01
		(T=-10 ˚C)
						12.8 × 0.25
	G9202-512S	One-stage TE-cooled		25	512		0.9 to 1.67			C8061-01
		(T=-10 ˚C)
	G9203-256D	Non-cooled		50	256	12.8 × 0.5	0.9 to 1.7			-
		(T=25 ˚C)
		One-stage
	G9203-256S	TE-cooled		50	256	12.8 × 0.5	0.9 to 1.67	0		C8061-01
		(T=-10 ˚C)
	G9204-512D	Non-cooled		25	512	12.8 × 0.5	0.9 to 1.7			-
		(T=25 ˚C)
		One-stage
	G9204-512S	TE-cooled		25	512	12.8 × 0.5	0.9 to 1.67			C8061-01
		(T=-10 ˚C)

High-speed type InGaAs linear image sensors

These are high-speed linear image sensors (data rate: 2 MHz) ideal for industrial and measurement equipments.

These image sensors use square-shaped pixels that are ideally suited for software processing in pattern recognition systems.

			Pixel pitch	Number of	Active area	Spectral response	Defective		Compatible driver
	Type no.	Cooling				range		Photo	circuit
				pixels	(mm × mm)		pixels
			( m)			( m)			(sold separately)
	G9494-256D		50	256	12.8 × 0.05
		Non-cooled				0.9 to 1.7	1 % max.		C10820
		(T=25 ˚C)
	G9494-512D		25	512	12.8 × 0.025

5

InGaAs PIN photodiodes

These are 1024-channel, high-speed infrared image sensors designed for applications such as foreigh object screening and medical diagnostic equipment where a multichannel high-speed line rate is required.

				Pixel pitch	Number of	Active area	Spectral response	Defective		Compatible driver
	Type no.		Cooling				range		Photo	circuit
				( m)	pixels	(mm × mm)		pixels
							( m)			(sold separately)
	G10768-1024D					25.6 × 0.1
			Non-cooled	25	1024		0.9 to 1.7	1 % max.		C10854
			(T=25 ˚C)
	NEW					25.6 × 0.025
G10768-1024DB

InGaAs photodiode arrays

	Quadrant InGaAs photodiodes and 16-element/40-element linear arrays					(Typ. Ta=25 ˚C)
	Type no.	Active area	Spectral response range	Peak sensitivity wavelength	Package	Photo
		(mm)	( m)	( m)
	G6849-01	φ1
		(Quadrant element)
					TO-5
	G6849	φ2
		(Quadrant element)

0.45 × 1.0

G7150-16 0.9 to 1.7 1.55

(16-element)

DIP

G7151-16

0.08 × 0.2

(16-element)

G8909-01

φ0.08 (40-element)

Ceramic

Spectral response

InGaAs linear image sensors

	1.5					(Typ.)
		T=25 ˚C			G9207-256W
		T=-10 ˚C
		T=-20 ˚C				G9208-256W
		G9201	G9206-256W
(A/W)		G9204 series
	1.0	G9211
		G9214 series
sensitivity		G9494 series
	G9205-256W
Photo	0.5
	0	1.0	1.5	2.0	2.5
	0.5					3.0

Wavelenghth ( m)

KMIRB0033EC

InGaAs linear image sensors G10768 series

	(Typ.)
	1.2
	50 ˚C
(A/W)	1.0
	0 ˚C
sensitivity	0.8
	25 ˚C
	0.6
Photo	0.4
	0.2
	0

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

Wavelength (m)

KMIRB0042EA

Photo sensitivity (A/W)

InGaAs photodiode arrays

(Typ. Ta=25 ˚C)

1

0.5

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Wavelength (m)

KIRDB0002EB

6

PbS, PbSe photoconductive detectors

PbS and PbSe detectors are photoconductive sensors whose resistance decreases with the input of infrared light. PbS has a spectral response range from 1 to 3.2 m, while the PbSe has a wider spectral range from 1.5 to 5.2m.

PbS photoconductive detectors
PbS photoconductive detectors are infrared sensors having a spectral response range from 1 to 3.2							m. These sensors
can be used at room temperature in a wide range of applications such as radiation thermometers and flame monitors.									(Typ.)
Type no.	Cooling	Active area	Cut-off wavelength		Peak sensitivity wavelength	Package		Photo	Accessory
		(mm)		( m)	( m)				(sold separately)
P9217		1 × 5
P9217-02		2 × 2				TO-5
P9217-03	Non-cooled	3 × 3	2.9		2.2				C3757-02 (P.21)
P9217-04		4 × 5				TO-8
	One-stage								C3757-02 (P.21)
P2532-01	TE-cooled		3.1		2.4				A3179 (P.19)
	(T=-10 ˚C)								C1103-04 (P.18)
		4 × 5				TO-8
	Two-stage								C3757-02 (P.21)
P2682-01	TE-cooled		3.2		2.5				A3179-01 (P.19)
	(T=-20 ˚C)								C1103-04 (P.18)

Spectral response

	1012			(Typ.)
				P2682-01
				(T=-20 ˚C)
/W)				P2532-01
1/2	10	11
				(T=-10 ˚C)
Hz
1) (cm ·			P9217-04
λ, 600,	1010
			(T=25 ˚C)
D* (
	109
		1	2	3	4

Wavelength (m)

KIRDB0375EA

	PbSe photoconductive detectors
	PbSe photoconductive detectors are infrared sensors having a spectral response range from 1.5 to 5.2 m. These sensors
	deliver high sensitivity and high-speed response at room temperatures. Cooled types are also available with a higher S/N
	making them widely used in analytical equipment, radiation thermometers and other precision photometry.									(Typ.)
			Active area	Cut-off		Peak sensitivity	Rise time			Accessory
	Type no.	Cooling		wavelength		wavelength	max.	Package	Photo
										(sold separately)
			(mm)	( m)		( m)	( s)
	P9696-02		2 × 2
		Non-cooled		4.8		4.0	10	TO-5
	P9696-03		3 × 3							C3757-02 (P.21)
	P3207-07*1	Non-cooled	2 × 2	4.8		4.3	10	TO-5
	P9696-102	One-stage	2 × 2							C3757-02 (P.21)
		TE-cooled		5.1		4.1				A3179 (P.19)
	P9696-103
		(T=-10 ˚C)	3 × 3				20	TO-8		C1103-04 (P.18)
	P9696-202	Two-stage	2 × 2							C3757-02 (P.21)
		TE-cooled		5.2		4.2				A3179-01 (P.19)
	P9696-203		3 × 3
		(T=-20 ˚C)								C1103-04 (P.18)
	*1: Incorporates a bandpass filter that transmits infrared light of 4 to 4.8					m

7