1874 - Semiconductor Point-Contact Rectifier Effect

Discovered

Ferdinand Braun

Nobel Laureate in Physics in 1909

In the first written description of a semiconductor diode, he noted that current flows freely in only one direction at the contact between a metal point and a galena crystal (lead sulfide). More famous for his invention of CRT.

arasw Source for this and next 8 slides: http://www.computerhistory.org/semiconductor/timeline.html

tanford University	IEEE DRC, 22 June, 2014	1
at

1930: Field Effect Semiconductor Device Concepts

Patented

Julius Lilienfeld

Julius Lilienfeld filed a patent describing a three-electrode amplifying device based on the semiconducting properties of copper sulfide. He did not demonstrate the device experimentally.

arasw

at	IEEE DRC, 22 June, 2014	2
tanford University

1940 - Discovery of the p-n Junction

Russell Ohl and Jack Scaff

Russell Ohl and Jack Scaff at Bell Telephone Labs discovered the p-n junction and photovoltaic effects in silicon that lead to the development of junction transistors and solar cells.

arasw

at	IEEE DRC, 22 June, 2014	3
tanford University

1947 - Invention of the Point-Contact Transistor in

Germanium

By Bardeen, Brattain, and Shockley,

Nobel Laureates in Physics 1956

1947

arasw

at	IEEE DRC, 22 June, 2014	4
tanford University

1958 - All semiconductor “Hybris Integrated Circuit" is demonstrated in Germanium

By Jack Kilby (TI),

Nobel Laureates in Physics 2000

arasw

at	IEEE DRC, 22 June, 2014	5
tanford University

1959 - Practical Monolithic Integrated Circuit

Concept Patented

Robert Noyce

Challenged by patent attorney to identify other uses for Hoerni’s

planar process, Fairchild co-founder Robert Noyce conceived the idea for a monolithic integrated circuit (IC) in silicon.

arasw

at	IEEE DRC, 22 June, 2014	6
tanford University

1960 - MOS Transistor Demonstrated

Dawon Kahng

John Atalla

	John Atalla and Dawon Kahng at Bell demonstrate the
arasw	first successful silicon PMOS field-effect amplifier.
at		IEEE DRC, 22 June, 2014	7
tanford University

1963 - Complementary MOS Circuit Invented

Frank Wanlass and C. T. Sah at Fairchild R & D Labs report the lowest power logic configuration .

arasw

at	IEEE DRC, 22 June, 2014	8
tanford University

1965 - "Moore's Law" Predicts the Future of

Integrated Circuits

Gordon Moore

	Electronics Magazine (April 1965)
	IEEE, IEDM (1975)
	Cost vs. time sketch from Moore's 1964 notebook
arasw
at	IEEE DRC, 22 June, 2014	9
tanford University

1974 - Scaling of IC Process Design Rules

Quantified

Robert Dennard, et al., IEEE J. Solid State Circuits, Oct. 1974.

arasw

tanfordat University

Constant E Field Scaling

All device parameters are scaled by the same factor .

•Channel length L

•Gate oxide thickness tox

•Supply voltage VD

•Source/drain junction depth Xj

•Channel doping

IEEE DRC, 22 June, 2014

10