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SDP8406

Silicon Phototransistor

FEATURES

∙Side-looking plastic package

∙50¡ (nominal) acceptance angle

∙Wide sensitivity ranges

∙Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes

INFRA-21.TIF

DESCRIPTION

The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package.

OUTLINE DIMENSIONS in inches (mm)

Tolerance

3 plc decimals

±0.005(0.12)

2 plc decimals

±0.020(0.51)

DIM_017.ds4

120	h

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

SDP8406

Silicon Phototransistor

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL MIN TYP MAX UNITS

TEST CONDITIONS

ABSOLUTE MAXIMUM RATINGS		SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage		30 V
Emitter-Collector Voltage		5 V
Power Dissipation		100 mW [À]
Operating Temperature Range		-40¡C to 85¡C
Storage Temperature Range		-40¡C to 85¡C
Soldering Temperature (5 sec)		240¡C

Notes

1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.

Honeywell reserves the right to make changes in order to improve design and

h

121

supply the best products possible.

SDP8406

Silicon Phototransistor

SWITCHING TIME TEST CIRCUIT

cir_015.cdr

Fig. 1 Responsivity vs

Angular Displacement

gra_054.ds4

		1.0
	response	0.9
		0.8
		0.7
		0.6
	Relative	0.5
		0.4
		0.3
		0.2

0.1

0.0 -60 -45 -30 -15 0 +15 +30 +45 +60

Angular displacement - degrees

Fig. 3 Dark Current vs

Temperature

gra_301.cdr

SWITCHING WAVEFORM

cir_004.cdr

Fig. 2 Collector Current vs

Ambient Temperature

gra_039.ds4

2.0

collectorNormalized current	1.6
	1.2
	0.8
	0.4
	0.0
	0				10				20			30			40				50				60			70			80

Ambient temperature - °C

Fig. 4 Non-Saturated Switching Time vs

Load Resistance

gra_041.ds4

100

time-µs
Response	10
	1
	10						100											1000														10000

Load resistance - Ohms

122	h

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

SDP8406

Silicon Phototransistor

Fig. 5

Relative response

Spectral Responsivity																										Fig. 6	Coupling Characteristics
																						gra_036.ds4					with SEP8506																																gra_031.ds4
1.0																											10
0.9																											6
0.8																										-mA	4
0.7																											2
0.6																										current	1.0
0.5
0.4																										Light	0.6
0.3																											0.4															IF = 20 mA
0.2																											0.2																VCE = 5V
0.1
																											0.1															TA = 25 °C
400						600				800				1000		1200											0.01		0.02									0.05				0.1				0.2						0.5								1.0
								Wavelength - nm																						Lens-to-lens separation - inches

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and

h

123

supply the best products possible.