Bologna / 06_TCAD_laboratory_MOSFET_GBB_20150223H1655
.pdfSdevice turn_on_des.cmd (4)
Math
{
*use previous two solutions (if any) to extrapolate next Extrapolate
*use full derivatives in Newton method
Derivatives
*control on relative and absolute errors -RelErrControl
*relative error= 10^(-Digits)
Digits=5
*absolute error Error(electron)=1e8 Error(hole)=1e8
*numerical parameter for space-charge regions eDrForceRefDens=1e10
hDrForceRefDens=1e10
*maximum number of iteration at each step Iterations=20
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Sdevice turn_on_des.cmd (5)
*solver of the linear system Method=ParDiSo
*display simulation time in 'human' units Wallclock
*display max.error information CNormPrint
*to avoid convergence problem when simulating defect-assisted tunneling NoSRHperPotential
}
Solve
{
* EQUILIBRIUM coupled {poisson}
*TURN-ON
*increasing VDS to goal
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.001 Goal {name= "drain" voltage = @vds_fixed@}
plot { range=(0, 1) intervals=1 }
)
G. Betti Beneventi 32
Sdevice turn_on_des.cmd (6)
{coupled {poisson electron hole} }
* increasing VGS to goal
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.001
Goal {name= "gate" voltage = @vgs_goal@}
plot { range=(0, 1) intervals=1 }
)
{coupled {poisson electron hole} }
}
We have thus far written the turn_on_des.cmd file for simulation of the turn-on characteristics (first raise VDS, then sweep VGS).
•Since we have two instances of Sdevice we need to write another input file for the second tool.
Select right Sdevice image tool Right Click Edit input Commands then write (copy) in the file the same commands as in the first command file at the exception of the Solve section that should be modified as follows in the next slide
G. Betti Beneventi 33
Sdevice output_des.cmd (1)
* previous part as turn_on_des.cmd Solve
{
* EQUILIBRIUM coupled {poisson}
*OUTPUT
*increasing VGS to goal
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.001
Goal {name= "gate" voltage = @vgs_fixed@}
plot { range=(0, 1) intervals=1 }
)
{coupled {poisson electron hole} } * increasing VDS to goal
quasistationary (InitialStep = 0.010 MaxStep = 0.050 MinStep=0.001 Goal {name= "drain" voltage = @vds_goal@}
plot { range=(0, 1) intervals=1 }
)
{coupled {poisson electron hole} }
}
G. Betti Beneventi 34
Parameter file, Pre-processing and Run
•Since parameter file is the same for all Sdevice tools we need to write one single sdevice.par
•Write an empty parameter file to keep the parameter default values:
• Select left Sdevice image tool Right Click Edit input Parameter No Save
Quit
DONE SDevice PART
Pre-processing and Run:
Select SDE real nodes CTRL-R local:priority Run
Select left Sdevice real nodes CTRL-R local:priority Run Select right Sdevice real nodes CTRL-R local:priority Run
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Post-processing: energy bands at equilibrium
• Right click on n2 Visualize Svisual (Select File…)
•Select n2_000000_des Ok
•Tools Precision Cuts Y 0 Plot Band Diagram
energy barrier for electrons to be overcome apply positive
source |
channel |
drain |
G. Betti Beneventi 36
Post-processing: energy bands at high
• Right click on n6 Visualize Svisual (Select File…)
•Select n6_000001_des Ok
•Tools Precision Cuts Y 0 Plot Band Diagram
energetic barrier is disappeared
= = 0
equilibrium no net current flow
source |
channel |
drain |
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Post-processing: electron concentration at high
•Window Plot_1
•Scalars eDensity
• Range 1e18 in the maximum value (=SubDop value) in order to see the inversion layer
•Zoom in in the channel region
G. Betti Beneventi 38
Post-processing: energy bands at high and high
• Right click on n2 Visualize Svisual (Select File…)
•Select n2_000003_des Ok
•Precision Cuts Y 0 Plot Band Diagram
it is like an
“inclined plane” for electrons
≠ ≠ 0
current flow
G. Betti Beneventi 39
Post-processing: turn-on characteristics
•Right click on n2 Visualize Inspect (All Files)
•Select n2_des on the Datasets part gate OuterVoltage To X-Axis drain TotalCurrent To Left-Y-Axis
•Then, select logY on the upper toolbar
•Double click on left Y-Axis scale min 1e-11
linscale |
|
logscale |
|
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inverse slope ~ 80 mV/dec
~ 0.3 V |
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G. Betti Beneventi 40 |
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