Table 17-13. High-Voltage Serial Programming Instruction Set for ATtiny13 (Continued)

			Instruction Format
Instruction		Instr.1/5	Instr.2/6	Instr.3	Instr.4	Operation Remarks
Read Signature	SDI	0_0000_1000_00	0_0000_00bb_00	0_0000_0000_00	0_0000_0000_00	Repeats Instr 2 4 for each
	SII	0_0100_1100_00	0_0000_1100_00	0_0110_1000_00	0_0110_1100_00
Bytes	SDO	x_xxxx_xxxx_xx	x_xxxx_xxxx_xx	x_xxxx_xxxx_xx	q_qqqq_qqqx_xx	signature byte address.
Read	SDI	0_0000_1000_00	0_0000_000b_00	0_0000_0000_00	0_0000_0000_00
	SII	0_0100_1100_00	0_0000_1100_00	0_0111_1000_00	0_0111_1100_00
Calibration Byte
	SDO	x_xxxx_xxxx_xx	x_xxxx_xxxx_xx	x_xxxx_xxxx_xx	p_pppp_pppx_xx
Load “No	SDI	0_0000_0000_00
Operation”	SII	0_0100_1100_00
Command	SDO	x_xxxx_xxxx_xx

Note: a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low bits, x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 fuse, 4 = CKSEL1 fuse, 5 = SUT0 fuse, 6 = SUT1 fuse, 7 = CKDIV8, fuse, 8 = WDTON fuse, 9 = EESAVE fuse, A = SPIEN fuse, B = RSTDISBL fuse, C = BODLEVEL0 fuse, D= BODLEVEL1 fuse, E = MONEN fuse, F = SELFPRGEN fuse

Note: The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM. Pagewise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase of EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.

17.8Considerations for Efficient Programming

The loaded command and address are retained in the device during programming. For efficient programming, the following should be considered.

•The command needs only be loaded once when writing or reading multiple memory locations.

•Skip writing the data value 0xFF that is the contents of the entire EEPROM (unless the EESAVE fuse is programmed) and Flash after a Chip Erase.

•Address High byte needs only be loaded before programming or reading a new 256 word window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes reading.

17.8.1Chip Erase

The Chip Erase will erase the Flash and EEPROM(1) memories plus lock bits. The lock bits are not reset until the Program memory has been completely erased. The fuse bits are not changed. A Chip Erase must be performed before the Flash and/or EEPROM are re-programmed.

1.Load command “Chip Erase” (see Table 17-13 on page 110).

2.Wait after Instr. 3 until SDO goes high for the “Chip Erase” cycle to finish.

3.Load Command “No Operation”.

Note: 1. The EEPROM memory is preserved during Chip Erase if the EESAVE fuse is programmed.

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ATtiny13

17.8.2Programming the Flash

The Flash is organized in pages, see Table 17-9 on page 107. When programming the Flash, the program data is latched into a page buffer. This allows one page of program data to be programmed simultaneously. The following procedure describes how to program the entire Flash memory:

1.Load Command “Write Flash” (see Table 17-13 on page 110).

2.Load Flash Page Buffer.

3.Load Flash High Address and Program Page. Wait after Instr. 3 until SDO goes high for the “Page Programming” cycle to finish.

4.Repeat 2 through 3 until the entire Flash is programmed or until all data has been programmed.

5.End Page Programming by Loading Command “No Operation”.

When writing or reading serial data to the ATtiny13, data is clocked on the rising edge of the serial clock, see Figure 17-4 on page 114, Figure 18-6 on page 122 and Table 18-9 on page 122 for details.

Figure 17-3. Addressing the Flash which is Organized in Pages

PROGRAM

PCMSB

PAGEMSB

PCPAGE

PCWORD

COUNTER

PAGE ADDRESS

WORD ADDRESS

WITHIN THE FLASH

WITHIN A PAGE

PROGRAM MEMORY

PAGE

PCWORD[PAGEMSB:0]:

PAGE

INSTRUCTION WORD

00

01

02

PAGEEND

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Figure 17-4. High-voltage Serial Programming Waveforms

SDI		MSB							LSB
PB0
SII		MSB							LSB
PB1
SDO		MSB							LSB
PB2
SCI	0	1	2	3	4	5	6	7	8	9	10
PB3

17.8.3Programming the EEPROM

The EEPROM is organized in pages, see Table 18-8 on page 121. When programming the EEPROM, the data is latched into a page buffer. This allows one page of data to be programmed simultaneously. The programming algorithm for the EEPROM Data memory is as follows (refer to Table 17-13 on page 110):

1.Load Command “Write EEPROM”.

2.Load EEPROM Page Buffer.

3.Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Programming” cycle to finish.

4.Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been programmed.

5.End Page Programming by Loading Command “No Operation”.

17.8.4Reading the Flash

The algorithm for reading the Flash memory is as follows (refer to Table 17-13 on page 110):

1.Load Command "Read Flash".

2.Read Flash Low and High Bytes. The contents at the selected address are available at serial output SDO.

17.8.5Reading the EEPROM

The algorithm for reading the EEPROM memory is as follows (refer to Table 17-13 on page 110):

1.Load Command “Read EEPROM”.

2.Read EEPROM Byte. The contents at the selected address are available at serial output SDO.

17.8.6Programming and Reading the Fuse and Lock Bits

The algorithms for programming and reading the fuse low/high bits and lock bits are shown in

Table 17-13 on page 110.

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