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ATtiny2313A/4313

Table 21-8. Serial Programming Instruction Set

 

 

 

 

Instruction Format

 

 

 

 

 

 

 

 

Instruction

Byte 1

Byte 2

Byte 3

Byte4

Operation

 

 

 

 

 

 

 

Write EEPROM Memory

1100 0010

00xx xxxx

xbbb bb00

xxxx xxxx

Write EEPROM page at address b.

Page (page access)

 

 

 

 

 

 

 

 

 

 

 

 

0101 1000

0000

0000

xxxx xxxx

xxoo oooo

Read Lock bits. “0” = programmed, “1”

Read Lock bits

= unprogrammed. See Table 20-1 on

 

 

 

 

 

 

 

 

page 178 for details.

 

 

 

 

 

 

 

 

 

 

 

 

1010 1100

111x

xxxx

xxxx xxxx

11ii iiii

Write Lock bits. Set bits = “0” to

Write Lock bits

program Lock bits. See Table 20-1 on

 

 

 

 

 

 

 

 

page 178 for details.

 

 

 

 

 

 

 

Read Signature Byte

0011 0000

000x

xxxx

xxxx xxbb

oooo oooo

Read Signature Byte o at address b.

Write Fuse bits

1010 1100

1010

0000

xxxx xxxx

iiii iiii

Set bits = “0” to program, “1” to

unprogram.

 

 

 

 

 

 

 

 

 

Write Fuse High bits

1010 1100

1010

1000

xxxx xxxx

iiii iiii

Set bits = “0” to program, “1” to

unprogram.

 

 

 

 

 

 

 

 

 

Write Extended Fuse Bits

1010 1100

1010

0100

xxxx xxxx

xxxx xxxi

Set bits = “0” to program, “1” to

unprogram.

 

 

 

 

 

 

 

 

 

Read Fuse bits

0101 0000

0000

0000

xxxx xxxx

oooo oooo

Read Fuse bits. “0” = programmed, “1”

= unprogrammed.

 

 

 

 

 

 

 

 

 

Read Fuse High bits

0101 1000

0000

1000

xxxx xxxx

oooo oooo

Read Fuse High bits. “0” = pro-

grammed, “1” = unprogrammed.

 

 

 

 

 

 

 

 

 

Read Extended Fuse Bits

0101 0000

0000

1000

xxxx xxxx

oooo oooo

Read Extended Fuse bits. “0” = pro-

grammed, “1” = unprogrammed.

 

 

 

 

 

 

 

Read Calibration Byte

0011 1000

000x

xxxx

0000 000b

oooo oooo

Read Calibration Byte at address b.

 

 

 

1111 0000

0000

0000

xxxx xxxx

xxxx xxxo

If o = “1”, a programming operation is

Poll RDY/BSY

 

still busy. Wait until this bit returns to

 

 

 

 

 

 

 

 

“0” before applying another command.

 

 

 

 

 

 

 

 

 

Note: a = address high bits, b = address low bits, H = 0 - Low byte, 1 - High Byte, o = data out, i = data in, x = don’t care

If the LSB of RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until this bit returns ‘0’ before the next instruction is carried out.

Within the same page, the low data byte must be loaded prior to the high data byte.

After data is loaded to the page buffer, program the EEPROM page.

21.4Programming Time for Flash and EEPROM

Flash and EEPROM wait times are listed in Table 21-9.

Table 21-9.

Minimum Wait Delay Before Writing the Next Flash or EEPROM Location

Symbol

 

Minimum Wait Delay

 

 

 

tWD_FLASH

 

4.5 ms

tWD_EEPROM

 

4.0 ms

tWD_ERASE

 

9.0 ms

tWD_FUSE

 

4.5 ms

197

8246B–AVR–09/11

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