ATtiny2313/V
	Serial Programming Pin	Table 75. Pin Mapping Serial Programming
	Mapping
		Symbol	Pins		I/O		Description
		MOSI	PB5		I		Serial Data in
		MISO	PB6		O		Serial Data out
		SCK	PB7		I		Serial Clock

Parallel Programming

Enter Programming Mode	The following algorithm puts the device in Parallel programming mode:
	1.	Set Prog_enable pins listed in Table 72 on page 162 to “0000”, RESET pin VCC
		to 0V.
	2.	Apply 4.5 - 5.5V between VCC and GND.
	3.	Ensure that VCC reaches at least 1.8V within the next 20 µs.
	4.	Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
	5.	Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage
		has been applied to ensure the Prog_enable Signature has been latched.
	6.	Wait at least 300 µs before giving any parallel programming commands.
	7.	Exit Programming mode by power the device down or by bringing RESET pin to
		0V.
	If the rise time of the VCC is unable to fulfill the requirements listed above, the following
	alternative algorithm can be used.
	1.	Set Prog_enable pins listed in Table 72 on page 162 to “0000”, RESET pin to 0V
		and VCC to 0V.
	2.	Apply 4.5 - 5.5V between VCC and GND.
	3.	Monitor VCC, and as soon as VCC reaches 0.9 - 1.1V, apply 11.5 - 12.5V to
		RESET.
	4.	Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage
		has been applied to ensure the Prog_enable Signature has been latched.
	5.	Wait until VCC actually reaches 4.5 -5.5V before giving any parallel programming
		commands.
	6.	Exit Programming mode by power the device down or by bringing RESET pin to
		0V.
Considerations for Efficient	The loaded command and address are retained in the device during programming. For
Programming	efficient programming, the following should be considered.
	•	The command needs only be loaded once when writing or reading multiple memory
		locations.
	•	Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless
		the EESAVE Fuse is programmed) and Flash after a Chip Erase.
	•	Address high byte needs only be loaded before programming or reading a new 256
		word window in Flash or 256 byte EEPROM. This consideration also applies to
		Signature bytes reading.
Chip Erase	The Chip Erase will erase the Flash and EEPROM(1) memories plus Lock bits. The Lock
	bits are not reset until the program memory has been completely erased. The Fuse bits

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are not changed. A Chip Erase must be performed before the Flash and/or EEPROM are reprogrammed.

Note: 1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.

Load Command “Chip Erase”

1.Set XA1, XA0 to “10”. This enables command loading.

2.Set BS1 to “0”.

3.Set DATA to “1000 0000”. This is the command for Chip Erase.

4.Give XTAL1 a positive pulse. This loads the command.

5.Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.

6.Wait until RDY/BSY goes high before loading a new command.

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			ATtiny2313/V
	Programming the Flash
		The Flash is organized in pages, see Table 69 on page 160. When programming the
		Flash, the program data is latched into a page buffer. This allows one page of program
		data to be programmed simultaneously. The following procedure describes how to pro-
		gram the entire Flash memory:

A. Load Command “Write Flash”

1.Set XA1, XA0 to “10”. This enables command loading.

2.Set BS1 to “0”.

3.Set DATA to “0001 0000”. This is the command for Write Flash.

4.Give XTAL1 a positive pulse. This loads the command.

B. Load Address Low byte

1.Set XA1, XA0 to “00”. This enables address loading.

2.Set BS1 to “0”. This selects low address.

3.Set DATA = Address low byte (0x00 - 0xFF).

4.Give XTAL1 a positive pulse. This loads the address low byte.

C. Load Data Low Byte

1.Set XA1, XA0 to “01”. This enables data loading.

2.Set DATA = Data low byte (0x00 - 0xFF).

3.Give XTAL1 a positive pulse. This loads the data byte.

D. Load Data High Byte

1.Set BS1 to “1”. This selects high data byte.

2.Set XA1, XA0 to “01”. This enables data loading.

3.Set DATA = Data high byte (0x00 - 0xFF).

4.Give XTAL1 a positive pulse. This loads the data byte.

E. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.

While the lower bits in the address are mapped to words within the page, the higher bits address the pages within the FLASH. This is illustrated in Figure 70 on page 166. Note that if less than eight bits are required to address words in the page (pagesize < 256), the most significant bit(s) in the address low byte are used to address the page when performing a Page Write.

F. Load Address High byte

1.Set XA1, XA0 to “00”. This enables address loading.

2.Set BS1 to “1”. This selects high address.

3.Set DATA = Address high byte (0x00 - 0xFF).

4.Give XTAL1 a positive pulse. This loads the address high byte.

G. Program Page

1.Give WR a negative pulse. This starts programming of the entire page of data. RDY/BSY goes low.

2.Wait until RDY/BSY goes high (See Figure 71 for signal waveforms).

H.Repeat B through H until the entire Flash is programmed or until all data has been programmed.

I.End Page Programming

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1.1. Set XA1, XA0 to “10”. This enables command loading.

2.Set DATA to “0000 0000”. This is the command for No Operation.

3.Give XTAL1 a positive pulse. This loads the command, and the internal write signals are reset.

Figure 70. Addressing the Flash Which is Organized in Pages(1)

PROGRAM

PCMSB

PAGEMSB

PCPAGE

PCWORD

COUNTER

PAGE ADDRESS

WORD ADDRESS

WITHIN THE FLASH

WITHIN A PAGE

PROGRAM MEMORY

PAGE

PCWORD[PAGEMSB:0]:

PAGE

INSTRUCTION WORD

00

01

02

PAGEEND

Note: 1. PCPAGE and PCWORD are listed in Table 69 on page 160.

Figure 71. Programming the Flash Waveforms(1)

								F
	A	B	C	D	E	B	C	D	E	G	H
DATA	0x10	ADDR. LOW	DATA LOW	DATA HIGH	XX	ADDR. LOW	DATA LOW	DATA HIGH	XX	ADDR. HIGH	XX
XA1
XA0
BS1
XTAL1
WR
RDY/BSY
RESET +12V
OE
PAGEL
BS2

Note: 1. “XX” is don’t care. The letters refer to the programming description above.

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