- •Contents
- •Preface
- •1.1 Elementary thermodynamic ideas of surfaces
- •1.1.1 Thermodynamic potentials and the dividing surface
- •1.1.2 Surface tension and surface energy
- •1.1.3 Surface energy and surface stress
- •1.2 Surface energies and the Wulff theorem
- •1.2.1 General considerations
- •1.2.3 Wulff construction and the forms of small crystals
- •1.3 Thermodynamics versus kinetics
- •1.3.1 Thermodynamics of the vapor pressure
- •1.3.2 The kinetics of crystal growth
- •1.4 Introduction to surface and adsorbate reconstructions
- •1.4.1 Overview
- •1.4.2 General comments and notation
- •1.4.7 Polar semiconductors, such as GaAs(111)
- •1.5 Introduction to surface electronics
- •1.5.3 Surface states and related ideas
- •1.5.4 Surface Brillouin zone
- •1.5.5 Band bending, due to surface states
- •1.5.6 The image force
- •1.5.7 Screening
- •Further reading for chapter 1
- •Problems for chapter 1
- •2.1 Kinetic theory concepts
- •2.1.1 Arrival rate of atoms at a surface
- •2.1.2 The molecular density, n
- •2.2 Vacuum concepts
- •2.2.1 System volumes, leak rates and pumping speeds
- •2.2.2 The idea of conductance
- •2.2.3 Measurement of system pressure
- •2.3 UHV hardware: pumps, tubes, materials and pressure measurement
- •2.3.1 Introduction: sources of information
- •2.3.2 Types of pump
- •2.3.4 Choice of materials
- •2.3.5 Pressure measurement and gas composition
- •2.4.1 Cleaning and sample preparation
- •2.4.3 Sample transfer devices
- •2.4.4 From laboratory experiments to production processes
- •2.5.1 Historical descriptions and recent compilations
- •2.5.2 Thermal evaporation and the uniformity of deposits
- •2.5.3 Molecular beam epitaxy and related methods
- •2.5.4 Sputtering and ion beam assisted deposition
- •2.5.5 Chemical vapor deposition techniques
- •Further reading for chapter 2
- •Problems for chapter 2
- •3.1.1 Surface techniques as scattering experiments
- •3.1.2 Reasons for surface sensitivity
- •3.1.3 Microscopic examination of surfaces
- •3.1.4 Acronyms
- •3.2.1 LEED
- •3.2.2 RHEED and THEED
- •3.3 Inelastic scattering techniques: chemical and electronic state information
- •3.3.1 Electron spectroscopic techniques
- •3.3.2 Photoelectron spectroscopies: XPS and UPS
- •3.3.3 Auger electron spectroscopy: energies and atomic physics
- •3.3.4 AES, XPS and UPS in solids and at surfaces
- •3.4.2 Ratio techniques
- •3.5.1 Scanning electron and Auger microscopy
- •3.5.3 Towards the highest spatial resolution: (a) SEM/STEM
- •Further reading for chapter 3
- •Problems, talks and projects for chapter 3
- •4.2 Statistical physics of adsorption at low coverage
- •4.2.1 General points
- •4.2.2 Localized adsorption: the Langmuir adsorption isotherm
- •4.2.4 Interactions and vibrations in higher density adsorbates
- •4.3 Phase diagrams and phase transitions
- •4.3.1 Adsorption in equilibrium with the gas phase
- •4.3.2 Adsorption out of equilibrium with the gas phase
- •4.4 Physisorption: interatomic forces and lattice dynamical models
- •4.4.1 Thermodynamic information from single surface techniques
- •4.4.2 The crystallography of monolayer solids
- •4.4.3 Melting in two dimensions
- •4.4.4 Construction and understanding of phase diagrams
- •4.5 Chemisorption: quantum mechanical models and chemical practice
- •4.5.1 Phases and phase transitions of the lattice gas
- •4.5.4 Chemisorption and catalysis: macroeconomics, macromolecules and microscopy
- •Further reading for chapter 4
- •Problems and projects for chapter 4
- •5.1 Introduction: growth modes and nucleation barriers
- •5.1.1 Why are we studying epitaxial growth?
- •5.1.3 Growth modes and adsorption isotherms
- •5.1.4 Nucleation barriers in classical and atomistic models
- •5.2 Atomistic models and rate equations
- •5.2.1 Rate equations, controlling energies, and simulations
- •5.2.2 Elements of rate equation models
- •5.2.3 Regimes of condensation
- •5.2.4 General equations for the maximum cluster density
- •5.2.5 Comments on individual treatments
- •5.3 Metal nucleation and growth on insulating substrates
- •5.3.1 Microscopy of island growth: metals on alkali halides
- •5.3.2 Metals on insulators: checks and complications
- •5.4 Metal deposition studied by UHV microscopies
- •5.4.2 FIM studies of surface diffusion on metals
- •5.4.3 Energies from STM and other techniques
- •5.5 Steps, ripening and interdiffusion
- •5.5.2 Steps as sources: diffusion and Ostwald ripening
- •5.5.3 Interdiffusion in magnetic multilayers
- •Further reading for chapter 5
- •Problems and projects for chapter 5
- •6.1 The electron gas: work function, surface structure and energy
- •6.1.1 Free electron models and density functionals
- •6.1.2 Beyond free electrons: work function, surface structure and energy
- •6.1.3 Values of the work function
- •6.1.4 Values of the surface energy
- •6.2 Electron emission processes
- •6.2.1 Thermionic emission
- •6.2.4 Secondary electron emission
- •6.3.1 Symmetry, symmetry breaking and phase transitions
- •6.3.3 Magnetic surface techniques
- •6.3.4 Theories and applications of surface magnetism
- •Further reading for chapter 6
- •Problems and projects for chapter 6
- •7.1.1 Bonding in diamond, graphite, Si, Ge, GaAs, etc.
- •7.1.2 Simple concepts versus detailed computations
- •7.2 Case studies of reconstructed semiconductor surfaces
- •7.2.2 GaAs(111), a polar surface
- •7.2.3 Si and Ge(111): why are they so different?
- •7.2.4 Si, Ge and GaAs(001), steps and growth
- •7.3.1 Thermodynamic and elasticity studies of surfaces
- •7.3.2 Growth on Si(001)
- •7.3.3 Strained layer epitaxy: Ge/Si(001) and Si/Ge(001)
- •7.3.4 Growth of compound semiconductors
- •Further reading for chapter 7
- •Problems and projects for chapter 7
- •8.1 Metals and oxides in contact with semiconductors
- •8.1.1 Band bending and rectifying contacts at semiconductor surfaces
- •8.1.2 Simple models of the depletion region
- •8.1.3 Techniques for analyzing semiconductor interfaces
- •8.2 Semiconductor heterojunctions and devices
- •8.2.1 Origins of Schottky barrier heights
- •8.2.2 Semiconductor heterostructures and band offsets
- •8.3.1 Conductivity, resistivity and the relaxation time
- •8.3.2 Scattering at surfaces and interfaces in nanostructures
- •8.3.3 Spin dependent scattering and magnetic multilayer devices
- •8.4 Chemical routes to manufacturing
- •8.4.4 Combinatorial materials development and analysis
- •Further reading for chapter 8
- •9.1 Electromigration and other degradation effects in nanostructures
- •9.2 What do the various disciplines bring to the table?
- •9.3 What has been left out: future sources of information
- •References
- •Index
4.2 Statistical physics of adsorption at low coverage |
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physisorbed molecules on many substrates. Bulk solid F2 is, however, quite dangerous, and has an alarming tendency to blow up by reacting dissociatively with its container.
This chapter starts by considering adsorption at low coverage, where the statistical mechanics of adsorption can be worked out precisely in terms of simple models; two of these limiting models are considered in some detail in section 4.2. The next section 4.3 discusses the application of thermodynamic reasoning to the adsorbed state of matter, including how to describe phases and phase transitions. The ®nal two sections 4.4 and 4.5 discuss the application of thermodynamic and statistical models to ®rst physisorption and then chemisorption, with experimental examples and literature references.
4.2Statistical physics of adsorption at low coverage
4.2.1General points
We have already discussed, in section 1.3.1, the sublimation of a pure solid at equilibrium, given by the condition mv5ms, with
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1kT ln (p), and the standard free energy m |
52 kT ln (kT/l3). |
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Now we wish to consider adsorbed layers in more detail, with a corresponding chemical potential ma. Thus we have two possible conditions: ma5mv for equilibrium with the vapor, and ma5ms for equilibrium with the solid. The ®rst case is discussed in the following sections 4.2.2 and 4.2.3. The second case was the subject of problem 1.2(b) in chapter 1.
4.2.2Localized adsorption: the Langmuir adsorption isotherm
In the Langmuir picture, each adatom is adsorbed at a well-de®ned adsorption site on
the surface. The canonical partition function for the adsorbed atoms is Za5oi exp (2 Ei/kT), and in general the Helmholtz free energy F52 kTln(Z), where Ei represents the energies of all the quantized states of the system. For Na adsorbed atoms distributed over N0 sites, each of which have the same adsorption energy Ea, Za5 Q(Na,N0)exp(NaEa/kT), where Q represents the con®gurational (and vibrational) degeneracy. The new element is the con®gurational entropy, since there are many ways,
at low coverage, to arrange the adatoms on the available adsorption sites. This Q is given by (e.g. Hill 1960, chapter 7.1) as
Q5N0!/(Na !)((N0 2 Na)!), |
(4.2) |
multiplied by a factor qNa if vibrational eVects are included, as discussed below. The expression for ln(Q) is evaluated using Stirling's approximation for ln(N!)5N ln(N)2 N, valid for large N, to give
ma5F/Na52 (kT/Na) ln (Za)5kT ln (u/(12 u))2 Ea 2 kT ln(q), |
(4.3) |
where u5Na/N0.
110 4 Surface processes in adsorption
The ®rst term is the con®gurational contribution in terms of the adatom coverage u, the second the adsorption energy (measured positive with the vacuum level zero), and the last term is the (optional) vibrational contribution. We can now see that if ma 5ms, the density of adatoms in ML units is determined, in the high temperature Einstein model, by
ms53kT ln(hn/kT)2 L05ma. |
(4.4a) |
Using the form of ma in (4.3), and rearranging to ®nd u gives, at low coverage, |
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u5C exp{(2 L01Ea)/kT}, |
(4.4b) |
where the pre-exponential function C depends on vibrations in both the solid and the adsorbed layer, and the important exponential term depends on the diVerence between the sublimation and the adsorption energy.
The Langmuir adsorption isotherm results from putting ma5mv, using this to calculate the vapor pressure p in equilibrium with the adsorbed layer. We now have
p5C1u/(12 u) exp (2 Ea/kT), or |
21exp(E |
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(4.5a) |
u5x(T)p/(11x(T)p), with x(T)5C |
/kT); |
(4.5b) |
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the constant C1 can be shown by direct substitution to be kT/ql3. The form of this isotherm is shown in ®gure 4.1(a), using parameters appropriate to xenon adsorbed on graphite. The coverage starts out linearly proportional to p, but goes to 1 as p → `.
The internal partition function q is the product of vibrational functions for the three dimensions, i.e. q5qxqyqz. If the Einstein model is chosen, then we can think of the z- direction, perpendicular to the surface, having a vibrational frequency na; this is the frequency appropriate to desorption, and in the high temperature limit qz5(kT/hna). The other two (x,y) frequencies, in the plane of the surface, will be the same on the square (or triangular, hexagonal) lattice, and correspond to diVusion frequencies nd. Thus q is inversely proportional to an `eVective' value ne3, for the adsorbed state, namely nand2. As we will see in section 4.4.4, this model is very good for the z-vibrations, but is certainly not exact for vibrations in the surface plane.
The pre-exponential constant in (4.5) is
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5kT/ql35(2pmn 2)3/2 |
(kT)21/2 . |
(4.6) |
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It is instructive to note that this is in exactly the same form as that for the vapor pressure in section 1.3.1. Moreover, the value of Ea includes the zero-point motion, analogously to the sublimation energy L0. Inserting reasonably realistic values for the vibration frequencies in (4.6) gives the full curve of ®gure 4.1(a), to be compared with the dashed curve in which vibrational eVects are neglected.
4.2.3The two-dimensional adsorbed gas: Henry law adsorption
If the entropy due to vibrations in the adsorbed layer becomes even more important, the adsorbate can eventually translate freely in two dimensions. This case is appropriate to a very smooth substrate, with shallow potential wells, and/or at high temperatures. Thus,
4.2 Statistical physics of adsorption at low coverage |
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Ea = 1925 K |
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T=60 K, Einstein vibrations |
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T=80 K, Einstein vibrations |
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2.0x10±74.0x10±76.0x10±78.0x10±71.0x10±6 |
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Pressure (Torr)
Figure 4.1. Vapor pressure isotherms of a monolayer using parameters approximating to xenon on graphite, with Ea51925 K/atom (166 meV/atom), but ignoring lateral interactions.
(a) Langmuir isotherms for T560 K: full line, Einstein model for vibration frequencies
na51,nd50.2 THz; dashed line, without vibrational eVects so that q51. (b) Comparison of Langmuir with 2D gas isotherm at T580 K: full and dashed lines as (a), dot-dash line, 2D gas with average adsorption energy E051889 K/atom. Note the lower coverage scale (4100 with respect to (a)) and the extra factor of 10 for the dashed curve without vibrational eVects.
112 4 Surface processes in adsorption
in contrast to the previous section, the other limit of isolated adatom behavior is the 2D gas. The mobile adatoms see the average adsorption energy E0, rather than the maximum energy Ea at the bottom of the potential wells. In compensation, they gain additional entropy from the gaseous motion. The chemical potential is now
m |
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1kT ln(N |
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where this expression is valid at suYciently low density for the distinction between classical, Bose±Einstein and Fermi±Dirac statistics not to be important. The derivation involves evaluating the partition function by summing over 2D momenta, analogously to a 3D gas, while retaining the z-motion partition function qz. The diVerence between 2D and 3D accounts for l2 rather than l3, and the Na/A, the number of adsorbed atoms per unit area, is the 2D version of the 3D density N/V, as in pV5NkT.
In fact, there is a 2D version of the perfect gas law of the form FA5NakT, where F is known as the spreading pressure. This means that we could write
m |
52E |
1kT ln(Fl2/kTq ), |
(4.8a) |
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1m21kT ln(F ), |
(4.8b) |
where m25 2 kT ln (kTqz /l2) is the standard free energy of a 2D gas. This makes the correspondence between 3D gases and 2D adsorption clear: p↔F, m0 ↔m2, and the energy is lower in the 2D case by E0. Note that it is easy to forget the qz term, as is often done, since the various qs are dimensionless: this doesn't make them unimportant numerically.
By equating ma5mv we get Henry's law for 2D gas adsorption:
p5C2(Na/A)exp(2 E0/kT), or |
(4.9a) |
(Na/A)5x9(T)p, |
(4.9b) |
with x9(T)5C221exp(E0/kT), and C25kT/qzl.
You may feel that detailed discussion of these constants is rather laboring the point, but it is instructive if we stick with it for a while. Note that the 2D gas form has (Na/A) proportional to p, whereas the localized form has the coverage u5Na/N0 proportional to p. These can be reconciled if we write (Na/A)5u (N0/A). Here we have de®ned the monolayer coverage (N0/A), and then de®ned (Na/A), the areal density of adsorbed atoms in terms of this, rather arti®cial, constant. (Both N0 and Na are numbers here, not areal densities, though we can think of them as densities by choosing A51). This is the identical problem we discussed in section 2.1.4, emphasizing the need for consistency in the de®nition of the ML unit. If, however, we do make this de®nition, we can recast the 2D gas equation as
p5(kTN0/Aqzl)u exp(2 E0/kT), |
(4.10) |
which can be compared directly with the corresponding equation for localized adsorption.
This comparison shows that there is a transition from localized to 2D gas-like behavior as the temperature is raised, because Ea.E0, whereas the pre-exponential (entropic) term is larger for the 2D gas. The ratio of coverages at a given p for the two states is