- •Contents
- •Preface
- •1.1 Elementary thermodynamic ideas of surfaces
- •1.1.1 Thermodynamic potentials and the dividing surface
- •1.1.2 Surface tension and surface energy
- •1.1.3 Surface energy and surface stress
- •1.2 Surface energies and the Wulff theorem
- •1.2.1 General considerations
- •1.2.3 Wulff construction and the forms of small crystals
- •1.3 Thermodynamics versus kinetics
- •1.3.1 Thermodynamics of the vapor pressure
- •1.3.2 The kinetics of crystal growth
- •1.4 Introduction to surface and adsorbate reconstructions
- •1.4.1 Overview
- •1.4.2 General comments and notation
- •1.4.7 Polar semiconductors, such as GaAs(111)
- •1.5 Introduction to surface electronics
- •1.5.3 Surface states and related ideas
- •1.5.4 Surface Brillouin zone
- •1.5.5 Band bending, due to surface states
- •1.5.6 The image force
- •1.5.7 Screening
- •Further reading for chapter 1
- •Problems for chapter 1
- •2.1 Kinetic theory concepts
- •2.1.1 Arrival rate of atoms at a surface
- •2.1.2 The molecular density, n
- •2.2 Vacuum concepts
- •2.2.1 System volumes, leak rates and pumping speeds
- •2.2.2 The idea of conductance
- •2.2.3 Measurement of system pressure
- •2.3 UHV hardware: pumps, tubes, materials and pressure measurement
- •2.3.1 Introduction: sources of information
- •2.3.2 Types of pump
- •2.3.4 Choice of materials
- •2.3.5 Pressure measurement and gas composition
- •2.4.1 Cleaning and sample preparation
- •2.4.3 Sample transfer devices
- •2.4.4 From laboratory experiments to production processes
- •2.5.1 Historical descriptions and recent compilations
- •2.5.2 Thermal evaporation and the uniformity of deposits
- •2.5.3 Molecular beam epitaxy and related methods
- •2.5.4 Sputtering and ion beam assisted deposition
- •2.5.5 Chemical vapor deposition techniques
- •Further reading for chapter 2
- •Problems for chapter 2
- •3.1.1 Surface techniques as scattering experiments
- •3.1.2 Reasons for surface sensitivity
- •3.1.3 Microscopic examination of surfaces
- •3.1.4 Acronyms
- •3.2.1 LEED
- •3.2.2 RHEED and THEED
- •3.3 Inelastic scattering techniques: chemical and electronic state information
- •3.3.1 Electron spectroscopic techniques
- •3.3.2 Photoelectron spectroscopies: XPS and UPS
- •3.3.3 Auger electron spectroscopy: energies and atomic physics
- •3.3.4 AES, XPS and UPS in solids and at surfaces
- •3.4.2 Ratio techniques
- •3.5.1 Scanning electron and Auger microscopy
- •3.5.3 Towards the highest spatial resolution: (a) SEM/STEM
- •Further reading for chapter 3
- •Problems, talks and projects for chapter 3
- •4.2 Statistical physics of adsorption at low coverage
- •4.2.1 General points
- •4.2.2 Localized adsorption: the Langmuir adsorption isotherm
- •4.2.4 Interactions and vibrations in higher density adsorbates
- •4.3 Phase diagrams and phase transitions
- •4.3.1 Adsorption in equilibrium with the gas phase
- •4.3.2 Adsorption out of equilibrium with the gas phase
- •4.4 Physisorption: interatomic forces and lattice dynamical models
- •4.4.1 Thermodynamic information from single surface techniques
- •4.4.2 The crystallography of monolayer solids
- •4.4.3 Melting in two dimensions
- •4.4.4 Construction and understanding of phase diagrams
- •4.5 Chemisorption: quantum mechanical models and chemical practice
- •4.5.1 Phases and phase transitions of the lattice gas
- •4.5.4 Chemisorption and catalysis: macroeconomics, macromolecules and microscopy
- •Further reading for chapter 4
- •Problems and projects for chapter 4
- •5.1 Introduction: growth modes and nucleation barriers
- •5.1.1 Why are we studying epitaxial growth?
- •5.1.3 Growth modes and adsorption isotherms
- •5.1.4 Nucleation barriers in classical and atomistic models
- •5.2 Atomistic models and rate equations
- •5.2.1 Rate equations, controlling energies, and simulations
- •5.2.2 Elements of rate equation models
- •5.2.3 Regimes of condensation
- •5.2.4 General equations for the maximum cluster density
- •5.2.5 Comments on individual treatments
- •5.3 Metal nucleation and growth on insulating substrates
- •5.3.1 Microscopy of island growth: metals on alkali halides
- •5.3.2 Metals on insulators: checks and complications
- •5.4 Metal deposition studied by UHV microscopies
- •5.4.2 FIM studies of surface diffusion on metals
- •5.4.3 Energies from STM and other techniques
- •5.5 Steps, ripening and interdiffusion
- •5.5.2 Steps as sources: diffusion and Ostwald ripening
- •5.5.3 Interdiffusion in magnetic multilayers
- •Further reading for chapter 5
- •Problems and projects for chapter 5
- •6.1 The electron gas: work function, surface structure and energy
- •6.1.1 Free electron models and density functionals
- •6.1.2 Beyond free electrons: work function, surface structure and energy
- •6.1.3 Values of the work function
- •6.1.4 Values of the surface energy
- •6.2 Electron emission processes
- •6.2.1 Thermionic emission
- •6.2.4 Secondary electron emission
- •6.3.1 Symmetry, symmetry breaking and phase transitions
- •6.3.3 Magnetic surface techniques
- •6.3.4 Theories and applications of surface magnetism
- •Further reading for chapter 6
- •Problems and projects for chapter 6
- •7.1.1 Bonding in diamond, graphite, Si, Ge, GaAs, etc.
- •7.1.2 Simple concepts versus detailed computations
- •7.2 Case studies of reconstructed semiconductor surfaces
- •7.2.2 GaAs(111), a polar surface
- •7.2.3 Si and Ge(111): why are they so different?
- •7.2.4 Si, Ge and GaAs(001), steps and growth
- •7.3.1 Thermodynamic and elasticity studies of surfaces
- •7.3.2 Growth on Si(001)
- •7.3.3 Strained layer epitaxy: Ge/Si(001) and Si/Ge(001)
- •7.3.4 Growth of compound semiconductors
- •Further reading for chapter 7
- •Problems and projects for chapter 7
- •8.1 Metals and oxides in contact with semiconductors
- •8.1.1 Band bending and rectifying contacts at semiconductor surfaces
- •8.1.2 Simple models of the depletion region
- •8.1.3 Techniques for analyzing semiconductor interfaces
- •8.2 Semiconductor heterojunctions and devices
- •8.2.1 Origins of Schottky barrier heights
- •8.2.2 Semiconductor heterostructures and band offsets
- •8.3.1 Conductivity, resistivity and the relaxation time
- •8.3.2 Scattering at surfaces and interfaces in nanostructures
- •8.3.3 Spin dependent scattering and magnetic multilayer devices
- •8.4 Chemical routes to manufacturing
- •8.4.4 Combinatorial materials development and analysis
- •Further reading for chapter 8
- •9.1 Electromigration and other degradation effects in nanostructures
- •9.2 What do the various disciplines bring to the table?
- •9.3 What has been left out: future sources of information
- •References
- •Index
Problems and projects for chapter 5 |
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reconstruction which orders the Fe, Co or Ni islands (Voigtländer et al. 1991, Chambliss et al. 1991, Stroscio et al. 1992, Meyer et al. 1995, Tölkes et al. 1997), and Fe or Co/Cu(100), where subsurface and surface ML islands can co-exist (Kief & EgelhoV 1993, Chambliss & Johnson 1994, Healy et al. 1994). The size distributions of clusters nucleated on point defects have been studied by KMC; a broad distribution is found, with a high proportion of small islands, as shown earlier in ®gure 5.17(b) (Amar
&Family 1995, Zangwill & Kaxiras 1995, Bales 1996, Brune 1998).
All these cases take us back to ®gure 5.3, and the diYculty of making high quality
multilayers from A/B/A systems: if one interface is `good', typically an example of SK growth as described in this section, then the other interface is `bad'. These systems may formally be an example of island growth, but active participation of the substrate makes this classi®cation too naive, in some cases even at room temperature. Nuclei form by exchanging deposit and substrate atoms; clusters of deposited atoms start to form, and then tend to get covered by a substrate `skin'. Once one realizes what is happening on a microscopic scale, the evidence is already there in the classical surface science results, e.g. from AES as shown in ®gure 5.21. These data show that segregation of Ag to the surface already happens at the ML level at room temperature; at 250 °C there is widespread interdiVusion.
Further reading for chapter 5
King, D.A. & D.P. WoodruV (Eds.) (1997) Growth and Properties of Ultrathin Epitaxial Layers (The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Elsevier), 8.
Liu, W.K. & M.B. Santos (Eds.) (1999) Thin Films: Heteroepitaxial Systems (World Scienti®c).
Matthews, J.W. (Ed.) (1975) Epitaxial Growth, part B (Academic).
Tringides, M.C. (Ed.) (1997) Surface DiVusion: Atomistic and Collective Processes
(Plenum NATO ASI) B360.
Problems and projects for chapter 5
Problem 5.1. Growth laws and the condensation coef®cient
The rate equation (5.10) is a good approximation when the coverage of the substrate by islands, Z,,1. When Z is not so small, one might like to correct (5.13a) for direct impingement, by writing R(12 Z) in place of R. The condensation coeYcient is the ratio of the amount of material in the ®lm to the amount in the depositing ¯ux, and comes in two forms a(t) and b(t).
(a)Identify the terms in the modi®ed (5.10) which lead to the increase in size of clusters, and write down an expression for the cluster growth rate, in atoms per unit area per second.
1825 Surface processes in epitaxial growth
(b)Assuming 2D islands, express the instantaneous condensation coeYcient b(t) in terms of the rate of atom arrival and departure (per unit area per second) at time t.
(c)Use the two above expressions to derive the form of the integrated condensation coeYcient a(t), assuming deposition was started at t50.
(d)Using (5.11) in addition, we can now compute nx(t), a(t) and Z(t). However, as explained in the text, it is preferable to use Z as the independent variable. Compute
nx(Z), a(Z) and t(Z) for parameter values which illustrate the initially incomplete condensation regime for a critical nucleus size i51, and 1024,Z,0.5, and identify on the surface processes which dominate at diVerent values of Z.
Problem 5.2. Capture numbers and Bessel functions
The rate equation treatment of capture numbers needs an ancilliary diVusion equation with cylindrical symmetry. Consider the formulation of such an equation in order to understand how the solutions (5.12) arise for incomplete condensation (t5ta), and how they can be generalized to the more general case when growth also occurs (t215
ta211tc21).
(a)Express the adatom diVusion equation -n1/-t5D= 2n1 in cylindrical polar coordinates, and determine the simpli®ed equation which results when the solution does not depend on the angular variable u.
(b)Now consider a particular cluster with radius rk, centered at r50, and add the source and sink terms from the rate equation (5.13) for the adatom concentration.
Explore the relation between the resulting steady state equation for n1(r) outside the cluster and Bessel's equation.
(c)By considering the boundary condition at the edge of the cluster, show that the
concentration n1(r)5Rt(12 K0(Xk)/K0(X)), where the arguments X and Xk of the Bessel function K0 are as de®ned in the text following (5.12).
(d)Given that the derivative of K0(X)52 K1(X), derive (5.12) for the capture numbers sk and sx by considering the diVusion ¯ux J(r)52 D=n1(r) at the cluster boundary. Show this result is exact for small clusters when t5ta, and that it is a good approximation when t215ta211tc21. For complete condensation, show that the result for sx only depends on the island coverage Z.
Project 5.3. Step capture and diffusion barriers between layers
Adatoms being captured by steps can be formulated as in problem 1.3 by considering an individual terrace and the boundary conditions at the steps at either end. Consider some further 1D step capture problems along the following lines.
(a)The presence of an Ehrlich±Schwoebel barrier at a down step means that an adatom has a temperature-dependent probability to be re¯ected there. Formulate this problem and apply your equations to the data shown in ®gure 5.19. What surface processes determine the nucleation density N(x,T) shown, on the assump-
Problems and projects for chapter 5 |
183 |
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tion of no intermixing between Au and Ag, and what value for the corresponding energies might you deduce from the comparison with experiment.
(b)Problems on a mesoscopic scale require a suitable mixture of atomistic and continuum modeling. One such problem is how to model the eVects of step capture on a scale large compared to the distance between the steps. Show that in this limit,
step capture contributes and extra characteristic inverse time ts to (5.13). Evaluate ts in terms of the step spacing d and the adatom diVusion coeYcient D to prove the limit given by (5.23), and see if it is valid in general.
(c)Use the results obtained from parts (a) and (b) to discuss the early stages of nucleation and growth of islands on a vicinal surface. Using such a formulation, discuss the occurrence of denuded zones parallel to the steps, and the reduction in nucleation density on vicinal surfaces. What are the eVects of step movement and island incorporation into steps at later stages?
Project 5.4. Clustering and intermixing during diffusion
The formulation of adatom diVusion in terms of hopping via (1.16) provides the simplest description of intrinsic diVusion, valid at low coverages. Consider some of the forms of the diVusion coeYcent which are appropriate to long range diVusion, valid at higher coverage and/or temperatures.
(a)The mass transport or chemical diVusion coeYcient D* is expressed here as n1D in (5.24). Consider the surface processes involved in Ostwald ripening of clusters, and
show that this expression is reasonable at low concentrations when only adatoms are mobile.
(b)At higher adatom concentrations some of the adatoms will spend part of the time in small clusters, size j, which have typically smaller (maybe zero) intrinsic diVusion
coeYcients, Dj. Show that in this case, the chemical diVusion coeYcient is concentration dependent, and is given by D*5oj j2nj Dj /{ oj j2nj}. Hence show, using the Walton relation (5.9) in its simplest form, that at non-zero concentrations D*
depends exponentially on Eb/kT as well as on Ed/kT, and may also depend on other energies due to diVusion of small clusters.
(c)At higher temperatures, surface vacancies are created in addition to adatoms, and at even higher temperatures the surface may become rough over several layers. In alloys we can have exchange diVusion with unlike species involved. Consider how these possibilities aVect the interpretation of D* in terms of individual surface (and near surface) processes.