- •Contents
- •Preface
- •1.1 Elementary thermodynamic ideas of surfaces
- •1.1.1 Thermodynamic potentials and the dividing surface
- •1.1.2 Surface tension and surface energy
- •1.1.3 Surface energy and surface stress
- •1.2 Surface energies and the Wulff theorem
- •1.2.1 General considerations
- •1.2.3 Wulff construction and the forms of small crystals
- •1.3 Thermodynamics versus kinetics
- •1.3.1 Thermodynamics of the vapor pressure
- •1.3.2 The kinetics of crystal growth
- •1.4 Introduction to surface and adsorbate reconstructions
- •1.4.1 Overview
- •1.4.2 General comments and notation
- •1.4.7 Polar semiconductors, such as GaAs(111)
- •1.5 Introduction to surface electronics
- •1.5.3 Surface states and related ideas
- •1.5.4 Surface Brillouin zone
- •1.5.5 Band bending, due to surface states
- •1.5.6 The image force
- •1.5.7 Screening
- •Further reading for chapter 1
- •Problems for chapter 1
- •2.1 Kinetic theory concepts
- •2.1.1 Arrival rate of atoms at a surface
- •2.1.2 The molecular density, n
- •2.2 Vacuum concepts
- •2.2.1 System volumes, leak rates and pumping speeds
- •2.2.2 The idea of conductance
- •2.2.3 Measurement of system pressure
- •2.3 UHV hardware: pumps, tubes, materials and pressure measurement
- •2.3.1 Introduction: sources of information
- •2.3.2 Types of pump
- •2.3.4 Choice of materials
- •2.3.5 Pressure measurement and gas composition
- •2.4.1 Cleaning and sample preparation
- •2.4.3 Sample transfer devices
- •2.4.4 From laboratory experiments to production processes
- •2.5.1 Historical descriptions and recent compilations
- •2.5.2 Thermal evaporation and the uniformity of deposits
- •2.5.3 Molecular beam epitaxy and related methods
- •2.5.4 Sputtering and ion beam assisted deposition
- •2.5.5 Chemical vapor deposition techniques
- •Further reading for chapter 2
- •Problems for chapter 2
- •3.1.1 Surface techniques as scattering experiments
- •3.1.2 Reasons for surface sensitivity
- •3.1.3 Microscopic examination of surfaces
- •3.1.4 Acronyms
- •3.2.1 LEED
- •3.2.2 RHEED and THEED
- •3.3 Inelastic scattering techniques: chemical and electronic state information
- •3.3.1 Electron spectroscopic techniques
- •3.3.2 Photoelectron spectroscopies: XPS and UPS
- •3.3.3 Auger electron spectroscopy: energies and atomic physics
- •3.3.4 AES, XPS and UPS in solids and at surfaces
- •3.4.2 Ratio techniques
- •3.5.1 Scanning electron and Auger microscopy
- •3.5.3 Towards the highest spatial resolution: (a) SEM/STEM
- •Further reading for chapter 3
- •Problems, talks and projects for chapter 3
- •4.2 Statistical physics of adsorption at low coverage
- •4.2.1 General points
- •4.2.2 Localized adsorption: the Langmuir adsorption isotherm
- •4.2.4 Interactions and vibrations in higher density adsorbates
- •4.3 Phase diagrams and phase transitions
- •4.3.1 Adsorption in equilibrium with the gas phase
- •4.3.2 Adsorption out of equilibrium with the gas phase
- •4.4 Physisorption: interatomic forces and lattice dynamical models
- •4.4.1 Thermodynamic information from single surface techniques
- •4.4.2 The crystallography of monolayer solids
- •4.4.3 Melting in two dimensions
- •4.4.4 Construction and understanding of phase diagrams
- •4.5 Chemisorption: quantum mechanical models and chemical practice
- •4.5.1 Phases and phase transitions of the lattice gas
- •4.5.4 Chemisorption and catalysis: macroeconomics, macromolecules and microscopy
- •Further reading for chapter 4
- •Problems and projects for chapter 4
- •5.1 Introduction: growth modes and nucleation barriers
- •5.1.1 Why are we studying epitaxial growth?
- •5.1.3 Growth modes and adsorption isotherms
- •5.1.4 Nucleation barriers in classical and atomistic models
- •5.2 Atomistic models and rate equations
- •5.2.1 Rate equations, controlling energies, and simulations
- •5.2.2 Elements of rate equation models
- •5.2.3 Regimes of condensation
- •5.2.4 General equations for the maximum cluster density
- •5.2.5 Comments on individual treatments
- •5.3 Metal nucleation and growth on insulating substrates
- •5.3.1 Microscopy of island growth: metals on alkali halides
- •5.3.2 Metals on insulators: checks and complications
- •5.4 Metal deposition studied by UHV microscopies
- •5.4.2 FIM studies of surface diffusion on metals
- •5.4.3 Energies from STM and other techniques
- •5.5 Steps, ripening and interdiffusion
- •5.5.2 Steps as sources: diffusion and Ostwald ripening
- •5.5.3 Interdiffusion in magnetic multilayers
- •Further reading for chapter 5
- •Problems and projects for chapter 5
- •6.1 The electron gas: work function, surface structure and energy
- •6.1.1 Free electron models and density functionals
- •6.1.2 Beyond free electrons: work function, surface structure and energy
- •6.1.3 Values of the work function
- •6.1.4 Values of the surface energy
- •6.2 Electron emission processes
- •6.2.1 Thermionic emission
- •6.2.4 Secondary electron emission
- •6.3.1 Symmetry, symmetry breaking and phase transitions
- •6.3.3 Magnetic surface techniques
- •6.3.4 Theories and applications of surface magnetism
- •Further reading for chapter 6
- •Problems and projects for chapter 6
- •7.1.1 Bonding in diamond, graphite, Si, Ge, GaAs, etc.
- •7.1.2 Simple concepts versus detailed computations
- •7.2 Case studies of reconstructed semiconductor surfaces
- •7.2.2 GaAs(111), a polar surface
- •7.2.3 Si and Ge(111): why are they so different?
- •7.2.4 Si, Ge and GaAs(001), steps and growth
- •7.3.1 Thermodynamic and elasticity studies of surfaces
- •7.3.2 Growth on Si(001)
- •7.3.3 Strained layer epitaxy: Ge/Si(001) and Si/Ge(001)
- •7.3.4 Growth of compound semiconductors
- •Further reading for chapter 7
- •Problems and projects for chapter 7
- •8.1 Metals and oxides in contact with semiconductors
- •8.1.1 Band bending and rectifying contacts at semiconductor surfaces
- •8.1.2 Simple models of the depletion region
- •8.1.3 Techniques for analyzing semiconductor interfaces
- •8.2 Semiconductor heterojunctions and devices
- •8.2.1 Origins of Schottky barrier heights
- •8.2.2 Semiconductor heterostructures and band offsets
- •8.3.1 Conductivity, resistivity and the relaxation time
- •8.3.2 Scattering at surfaces and interfaces in nanostructures
- •8.3.3 Spin dependent scattering and magnetic multilayer devices
- •8.4 Chemical routes to manufacturing
- •8.4.4 Combinatorial materials development and analysis
- •Further reading for chapter 8
- •9.1 Electromigration and other degradation effects in nanostructures
- •9.2 What do the various disciplines bring to the table?
- •9.3 What has been left out: future sources of information
- •References
- •Index
196 6 Electronic structure and emission processes
d |
+ve |
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-ve |
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charges
(a) |
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(b) |
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image charges |
Figure 6.8. Origins of faceand adsorbate-speci®c work function: (a) dipoles due to charge transfer from adsorbates; (b) top-view of a stepped surface showing smoothing of the charge distribution around the steps (after Gomer 1961, and WoodruV & Delchar 1986, redrawn with permission).
decreases linearly with step density, as shown in ®gure 6.9; this implies that there is a well de®ned dipole moment per ledge atom, around 0.3 D for steps parallel to [001] on W(110) and varying with step direction on Au and Pt(111) surfaces (Krahl-Urban et al. 1977; Besocke et al. 1977; Wagner 1979).
Fascinatingly, work function changes as a function of temperature can be used to de®ne 2D solid±gas phase changes via these same eVects. An adatom has a dipole moment which depends both on its chemical nature and on its environment. In a solid ML island the dipole moment per atom is considerably smaller than in the 2D gas. This eVect has been used to map out the gas±solid phase boundary for Au/W(110) at high temperatures (Kolaczkiewicz & Bauer 1984). Phase changes in adsorbed layers are discussed in more detail in chapter 4.
6.1.4Values of the surface energy
While the work function is a sensitive test of electronic structure models, particularly exchange and correlation, surface energies are sensitive tests of our understanding of cohesion. Surface energies clearly increase, in general, with sublimation energies, and this has led to many studies trying to embody such relationships into universal potential curves, or into other semi-empirical models (Rose et al. 1983, deBoer et al. 1988). But the eVective medium and density functional models have proven to be more durable, and we may well now have arrived at the point where these models are more accurate than the experiments, which were almost all done a long time ago on polycrystalline samples, sometimes under uncertain vacuum conditions. An example of a microscope based sublimation experiment for Ag, which has stood the test of time, and which agrees with recent calculations within error, is that by Sambles et al. (1970). Some experimental and theoretical values for a range of metals are given in table 6.3.
As in the case of the work function, the starting point for models of alkali and other s-p bonded metals has been the jellium model. As was shown in the original Lang &
Kohn papers, jellium has an instability at small rs values, which is due to the neglect of the ion cores. This topic has been pursued by Perdew et al. (1990), Perdew (1995) and
Kiejna (1999), who have been interested in exploring the simplest feasible pseudopotential models for such metals, and in particular obtaining trends in calculations as a
6.1 The electron gas |
197 |
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Figure 6.9. Work function of stepped (vicinal) surfaces: (a) vicinals of W(110) in the [001] zone as a function of step density; (b) vicinals of Au and Pt(111) with two diVerent step directions (Krahl-Urban et al. 1977; Besocke et al. 1977; Wagner 1979, reproduced with permission).
198 6 Electronic structure and emission processes
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1.2 |
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Al |
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1.0 |
Zn |
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Ga |
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) |
0.8 |
Mg |
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(J.m |
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Cd |
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energy |
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In |
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0.6 |
Hg |
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Pb |
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Li |
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Surface |
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Ca |
Sr |
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0.4 |
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Ba |
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Na |
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0.2 |
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K |
Rb |
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Cs |
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0.0 |
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2 |
3 |
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4 |
5 |
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radius, |
rs (a.u.) |
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Figure 6.10. Surface energies of alkali and other s-p bonded metals, showing experimental values on polycrystalline materials and liquid metals (full squares from Tyson & Miller 1977 and Vitos et al. 1998, with open squares from deBoer et al. 1988 where the results diVer signi®cantly), compared with the jellium (dashed curve, sixth order polynomial ®t) and ¯at structureless pseudopotential models (full curve, fourth order polynomial ®t after Perdew et al. 1990) as a function of the radius rs. The jellium model has an instability at small rs, which is pushed to smaller values in the stabilized model.
function of rs as illustrated in ®gure 6.10. The model illustrated is termed the structureless pseudopotential model, and has been developed in various varieties; the one illustrated here is `¯at' in the sense that no attempt is made to take account of the actual ionic positions on diVerent {hkl} faces. There are many other calculations in the literature, especially aiming to take account of the complexity of d-band metals, some of which are cited in table 6.3; several of these calculations can be accessed from the data base for 60 elements compiled by Vitos et al. (1998).
In section 1.2.3, we noted that pair bond models overestimated the anisotropy of surface energy in comparison with the classic experiments of Heyraud & Métois (1983) on Pb, which were shown in ®gures 1.7 and 1.8. The modern calculations shown in table 6.3 are the only ones getting the anisotropy of surface energy low enough to be even close to experiments on small metal particles. However, it is ironic that the full charge density (FCD) calculation, carried out with the GGA approximation by Vitos et al. (1998) still gives too high an anisotropy, especially for Pb, which is almost the only case (plus In and Sn, see Pavlovska et al. 1989, 1994) for which there
6.1 The electron gas |
199 |
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Table 6.3. Experimental surface free energies for metals assembled by Eustathopoulos et al. (1973), Tyson & Miller (1977), Mezey & Giber (1982) and deBoer et al. (1988), compared with calculations by Perdew, Tran & Smith (1990; PTS), Skriver & Rosengaard (1992; SR), Methfessel, Hennig & ScheZer (1992; MHS) and Vitos, Ruban, Skriver & Kollár (1998; VRSK)
|
Experiment* |
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Model |
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Metal/ |
(J/m2), at T |
Face |
Model |
Model |
(MHS) |
Model |
Structure |
and at 0 K |
{hkl} |
(PTS) |
(SR) |
1 others* |
(VRSK) |
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Li |
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111 |
0.433 |
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b.c.c. |
0.525 |
100 |
0.371 |
0.436 |
0.412b |
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110 |
0.326 |
0.458 |
0.362b |
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Na |
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111 |
0.252 |
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b.c.c. |
0.260 |
100 |
0.216 |
0.236 |
0.237b |
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110 |
0.190 |
0.307 |
0.208b |
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K |
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111 |
0.134 |
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b.c.c. |
0.130 |
100 |
0.115 |
0.129 |
0.126b |
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110 |
0.134 |
0.116 |
0.111b |
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Cs |
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111 |
0.092 |
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b.c.c. |
0.095 |
100 |
0.079 |
0.092 |
0.080b |
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110 |
0.069 |
0.072 |
0.070b |
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Al |
1.14 |
110 |
1.103 |
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1.271 |
f.c.c. |
175°C |
100 |
0.977 |
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1.347 |
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1.14±1.16 |
111 |
0.921 |
1.27 |
1.096b |
1.199 |
Cu |
1.60 |
110 |
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2.31 |
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2.237 |
f.c.c. |
900±1070°C |
100 |
|
2.09 |
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2.166 |
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1.78±1.83 |
111 |
|
1.96 |
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1.952 |
Ag |
1.20 6 0.06a |
110 |
|
1.29 |
1.26 |
1.238 |
f.c.c. |
800±830°C |
100 |
|
1.20 |
1.21 |
1.200 |
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1.25 |
111 |
|
1.12 |
1.21 |
1.172 |
Au |
1.40 6 0.05c |
110 |
|
1.79 |
|
1.700 |
f.c.c. |
950±1000°C |
100 |
|
1.71 |
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1.627 |
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1.50 |
111 |
|
1.61 |
|
1.283 |
Nb |
2.30 |
111 |
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3.045 |
b.c.c. |
1900°C |
100 |
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2.36 |
2.858 |
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2.67±2.70 |
110 |
|
1.64 |
2.86 |
2.685 |
Mo |
2.00 |
111 |
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3.740 |
b.c.c. |
1800°C |
100 |
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3.14 |
3.837 |
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2.95±3.00 |
110 |
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3.18 |
3.52 |
3.454 |
W |
2.80 |
111 |
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4.452 |
b.c.c. |
1700°C |
100 |
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4.635 |
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3.25±3.68 |
110 |
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3.84 |
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4.005 |
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Note: *Error bars and other calculations from (a) Sambles et al. (1970); (b) Perdew (1995);
(c) Heyraud & Métois (1980).