ATmega16(L)

Parallel

Programming

Enter Programming	The following algorithm puts the device in Parallel Programming mode:
Mode	1.	Apply 4.5 - 5.5V between VCC and GND, and wait at least 100 µs.
	2.	Set		to “0” and toggle XTAL1 at least 6 times
			RESET
	3.	Set the Prog_enable pins listed in Table 110 on page 263 to “0000” and wait at least 100
		ns.
	4.	Apply 11.5 - 12.5V to						Any activity on Prog_enable pins within 100 ns after +12V
						RESET.
		has been applied to			RESET,		will cause the device to fail entering Programming mode.

Note, if External Crystal or External RC configuration is selected, it may not be possible to apply qualified XTAL1 pulses. In such cases, the following algorithm should be followed:

1.Set Prog_enable pins listed in Table 110 on page 263 to “0000”.

2.Apply 4.5 - 5.5V between VCC and GND simultaneously as 11.5 - 12.5V is applied to RESET.

3.Wait 100 µs.

4.Re-program the fuses to ensure that External Clock is selected as clock source (CKSEL3:0 = 0b0000) If Lock bits are programmed, a Chip Erase command must be executed before changing the fuses.

5.Exit Programming mode by power the device down or by bringing RESET pin to 0b0.

6.Entering Programming mode with the original algorithm, as described above.

Considerations for The loaded command and address are retained in the device during programming. For efficient Efficient Programming programming, the following should be considered.

•The command needs only be loaded once when writing or reading multiple memory locations.

•Skip writing the data value $FF, that is the contents of the entire EEPROM (unless the EESAVE Fuse is programmed) and Flash after a Chip Erase.

•Address High byte needs only be loaded before programming or reading a new 256 word window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes reading.

Chip Erase

The Chip Erase will erase the Flash and EEPROM(1) memories plus Lock bits. The Lock bits are

not reset until the program memory has been completely erased. The Fuse bits are not

changed. A Chip Erase must be performed before the Flash and/or the EEPROM are

reprogrammed.

Note: 1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed.

Load Command “Chip Erase”

1.

Set XA1, XA0 to “10”. This enables command loading.

2.

Set BS1 to “0”.

3.

Set DATA to “1000 0000”. This is the command for Chip Erase.

4.

Give XTAL1 a positive pulse. This loads the command.

5.

Give

goes low.

WR

a negative pulse. This starts the Chip Erase. RDY/BSY

6.

goes high before loading a new command.

Wait until RDY/BSY

Programming the

The Flash is organized in pages, see Table 107 on page 262. When programming the Flash, the

Flash

program data is latched into a page buffer. This allows one page of program data to be pro-

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grammed simultaneously. The following procedure describes how to program the entire Flash memory:

A. Load Command “Write Flash”

1.Set XA1, XA0 to “10”. This enables command loading.

2.Set BS1 to “0”.

3.Set DATA to “0001 0000”. This is the command for Write Flash.

4.Give XTAL1 a positive pulse. This loads the command.

B. Load Address Low byte

1.Set XA1, XA0 to “00”. This enables address loading.

2.Set BS1 to “0”. This selects low address.

3.Set DATA = Address Low byte ($00 - $FF).

4.Give XTAL1 a positive pulse. This loads the address Low byte.

C. Load Data Low Byte

1.Set XA1, XA0 to “01”. This enables data loading.

2.Set DATA = Data Low byte ($00 - $FF).

3.Give XTAL1 a positive pulse. This loads the data byte.

D. Load Data High Byte

1.Set BS1 to “1”. This selects high data byte.

2.Set XA1, XA0 to “01”. This enables data loading.

3.Set DATA = Data High byte ($00 - $FF).

4.Give XTAL1 a positive pulse. This loads the data byte.

E. Latch Data

1.Set BS1 to “1”. This selects high data byte.

2.Give PAGEL a positive pulse. This latches the data bytes. (See Figure 129 for signal waveforms)

F. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.

While the lower bits in the address are mapped to words within the page, the higher bits address the pages within the FLASH. This is illustrated in Figure 128 on page 267. Note that if less than 8 bits are required to address words in the page (pagesize < 256), the most significant bit(s) in the address Low byte are used to address the page when performing a page write.

G. Load Address High byte

1.Set XA1, XA0 to “00”. This enables address loading.

2.Set BS1 to “1”. This selects high address.

3.Set DATA = Address High byte ($00 - $FF).

4.Give XTAL1 a positive pulse. This loads the address High byte.

H. Program Page

1.Set BS1 = “0”

2.Give WR a negative pulse. This starts programming of the entire page of data. RDY/BSY goes low.

3.Wait until RDY/BSY goes high. (See Figure 129 for signal waveforms)

I. Repeat B through H until the entire Flash is programmed or until all data has been programmed.

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ATmega16(L)

J. End Page Programming

1.1. Set XA1, XA0 to “10”. This enables command loading.

2.Set DATA to “0000 0000”. This is the command for No Operation.

3.Give XTAL1 a positive pulse. This loads the command, and the internal write signals are reset.

Figure 128. Addressing the Flash which is Organized in Pages

PROGRAM

PCMSB

PAGEMSB

PCPAGE

PCWORD

COUNTER

PAGE ADDRESS

WORD ADDRESS

WITHIN THE FLASH

WITHIN A PAGE

PROGRAM MEMORY

PAGE

PCWORD[PAGEMSB:0]:

PAGE

INSTRUCTION WORD

00

01

02

PAGEEND

Note: 1. PCPAGE and PCWORD are listed in Table 107 on page 262.

Figure 129. Programming the Flash Waveforms(1)

F

A

B

C

D

E

B

C

D

E

G

H

DATA

$10

ADDR. LOW

DATA LOW

DATA HIGH

XX

ADDR. LOW

DATA LOW

DATA HIGH

XX

ADDR. HIGH

XX

XA1

XA0

BS1

XTAL1

WR

RDY/BSY

RESET

+12V

OE

PAGEL

BS2

Note:

1.

“XX” is don’t care. The letters refer to the programming description above.

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Programming the The EEPROM is organized in pages, see Table 108 on page 262. When programming the EEPROM EEPROM, the program data is latched into a page buffer. This allows one page of data to be programmed simultaneously. The programming algorithm for the EEPROM data memory is as follows (refer to “Programming the Flash” on page 265 for details on Command, Address and

Data loading):

1.A: Load Command “0001 0001”.

2.G: Load Address High Byte ($00 - $FF)

3.B: Load Address Low Byte ($00 - $FF)

4.C: Load Data ($00 - $FF)

5.E: Latch data (give PAGEL a positive pulse)

K:Repeat 3 through 5 until the entire buffer is filled

L:Program EEPROM page

1.Set BS1 to “0”.

2.Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY goes low.

3.Wait until to RDY/BSY goes high before programming the next page. (See Figure 130 for signal waveforms)

Figure 130. Programming the EEPROM Waveforms

							K
	A	G	B	C	E	B	C	E	L
DATA	0x11	ADDR. HIGH ADDR. LOW		DATA	XX	ADDR. LOW	DATA	XX

XA1

XA0

BS1

XTAL1

WR

RDY/BSY

RESET +12V

OE

PAGEL

BS2

Reading the Flash The algorithm for reading the Flash memory is as follows (refer to “Programming the Flash” on page 265 for details on Command and Address loading):

1.A: Load Command “0000 0010”.

2.G: Load Address High Byte ($00 - $FF)

3.B: Load Address Low Byte ($00 - $FF)

4.Set OE to “0”, and BS1 to “0”. The Flash word Low byte can now be read at DATA.

5.Set BS1 to “1”. The Flash word High byte can now be read at DATA.

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